Image pickup device and electronic apparatus

ABSTRACT

An image pickup device includes: a first electrode film; an organic photoelectric conversion film; a second electrode film; and a metal wiring film electrically connected to the second electrode film, the first electrode film, the organic photoelectric conversion film, and the second electrode film all provided on a substrate in this order, and the metal wiring film coating an entire side of the organic photoelectric conversion film.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/942,715, filed Nov. 16, 2015, which is a continuation of U.S. patentapplication Ser. No. 14/313,488, filed Jun. 24, 2014, now U.S. Pat. No.9,224,789, issued Dec. 29, 2015, which claims the benefit of JapanesePriority Patent Application JP2013-138262 filed Jul. 1, 2013, the entiredisclosures of which are hereby incorporated herein by reference.

BACKGROUND

The present technology relates to an image pickup device, and anelectronic apparatus equipped with the image pickup device.

Currently, image pickup devices, such as complementary metal oxidesemiconductor (CMOS) image sensors and charge coupled devices (CCDs),are widely applied to digital still cameras, digital video cameras, andother similar apparatuses. Such image pickup devices include, in eachpixel, for example, a photoelectric conversion film that acquires aphotoelectric conversion signal, and a signal read circuit that readsthe photoelectric conversion signal and outputs it to the outside. Thisphotoelectric conversion film may be made of, for example, an organicmaterial (e.g., refer to Japanese Unexamined Patent ApplicationPublication No. 2013-55252).

SUMMARY

Organic materials tend to be deteriorated easily by moisture or gas. So,if the photoelectric conversion film is made of an organic material, itis necessary to suppress moisture and gas from entering thisphotoelectric conversion film. In some related techniques, aphotoelectric conversion film is covered with a protective film thatcontains, for example, silicon nitride as its main ingredient, so thatan entry of moisture and gas to the photoelectric conversion film issuppressed. Nevertheless, only covering a photoelectric conversion filmwith a protective film still has difficulty sufficiently suppressingmoisture and gas from entering it. This is because pinholes may becreated in the protective film or its step may be cracked, and an entryof moisture or gas through these pinholes or cracks could causedeterioration of the photoelectric conversion film. Furthermore, thephotoelectric conversion film sustains etching damage in themanufacturing process, and therefore may be deteriorated. In short,photoelectric conversion films tend to be deteriorated easily by variousincidents. Therefore, there is a necessity to suppress deterioration ofphotoelectric conversion films.

It is desirable to provide an image pickup device that is capable ofsuppressing deterioration of a photoelectric conversion film, and anelectronic apparatus equipped with the image pickup device.

An image pickup device according to an embodiment of the presenttechnology includes: a first electrode film; an organic photoelectricconversion film; a second electrode film; and a metal wiring filmelectrically connected to the second electrode film. The first electrodefilm, the organic photoelectric conversion film, and the secondelectrode film are all provided on a substrate in this order. The metalwiring film coats an entire side of the organic photoelectric conversionfilm.

An electronic apparatus according to an embodiment of the presenttechnology includes: an image pickup device; and a signal processingcircuit subjecting a pixel signal output from the image pickup device toa predetermined process, the image pickup device including a firstelectrode film, an organic photoelectric conversion film, and a secondelectrode film which are all provided on a substrate in this order, anda metal wiring film electrically connected to the second electrode film,the metal wiring film coating an entire side of the organicphotoelectric conversion film.

According to the image pickup device and electronic apparatus in theembodiment of the present technology, the metal wiring film that iselectrically connected to the second electrode film coats the entireside of the organic photoelectric conversion film. The metal wiring filmused to drive the image pickup device thereby suppresses moisture andgas from entering the interior of the organic photoelectric conversionfilm through the side of the organic photoelectric conversion film.Consequently, according to the embodiment of the present technology, themetal wiring film is used for not only a voltage application path forthe second electrode film, but also the protection of the organicphotoelectric conversion film.

According to the image pickup device and electronic apparatus in theembodiment of the present technology, the metal wiring film used todrive the image pickup device suppresses moisture and gas from enteringthe interior of the organic photoelectric conversion film through theside of the organic photoelectric conversion film. It is thus possibleto suppress deterioration of the photoelectric conversion film.

Moreover, according to the image pickup device and electronic apparatusin the embodiment of the present technology, if a protective film isprovided between the organic photoelectric conversion film and the metalwiring film so as to coat both the organic photoelectric conversion filmand the second electrode film, it is possible to use this protectivefilm to mitigate etching damage to the organic photoelectric conversionfilm during manufacturing processing of the image pickup device. It isthus also possible to suppress deterioration of the photoelectricconversion film.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary, and are intended toprovide further explanation of the technology as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate embodiments and,together with the specification, serve to explain the principles of thetechnology.

FIG. 1 is a view showing a upper-surface configuration example of animage pickup device according to a first embodiment of the presenttechnology.

FIG. 2 is a view showing a cross-sectional configuration example asviewed from a direction of an A-A arrow in FIG. 1.

FIG. 3 is a view showing a upper-surface configuration example of animage pickup device according to a first modification.

FIG. 4 is a view showing a cross-sectional configuration example asviewed from a direction of an A-A arrow in FIG. 3.

FIG. 5 is a view showing a cross-sectional configuration example of animage pickup device according to a second modification.

FIG. 6 is a view showing a cross-sectional configuration example of animage pickup device according to a third embodiment.

FIG. 7 is a view showing a cross-sectional configuration example of theimage pickup device according to the third embodiment.

FIG. 8 is a view showing a cross-sectional configuration example of theimage pickup device according to the third embodiment.

FIG. 9A is a view showing a manufacturing step example of the imagepickup device in FIG. 6.

FIG. 9B is a view showing a manufacturing step example which followsthat in FIG. 9A.

FIG. 10A is a view showing a manufacturing step example which followsthat in FIG. 9B.

FIG. 10B is a view showing a manufacturing step example which followsthat in FIG. 10A.

FIG. 11 is a view showing another manufacturing step example whichfollows that in FIG. 10A.

FIG. 12 is a view showing a cross-sectional configuration example of animage pickup device according to the third embodiment.

FIG. 13 is a view showing a upper-surface configuration example of animage pickup device according to a fourth modification.

FIG. 14 is a view showing a cross-sectional configuration example asviewed from a direction of an A-A arrow in FIG. 13.

FIG. 15 is a view showing a upper-surface configuration example of theimage pickup device according to the fourth modification.

FIG. 16 is a view showing a cross-sectional configuration example asviewed from a direction of an A-A arrow in FIG. 15.

FIG. 17 is a view showing a cross-sectional configuration example of theimage pickup device according to the fourth modification.

FIG. 18 is a view showing a cross-sectional configuration example of theimage pickup device according to the fourth modification.

FIG. 19 is a view showing a cross-sectional configuration example of theimage pickup device according to the fourth modification.

FIG. 20 is a view showing a cross-sectional configuration example of theimage pickup device according to the fourth modification.

FIG. 21 is a view showing a cross-sectional configuration example of animage pickup device according to a fifth modification.

FIG. 22 is a view showing a cross-sectional configuration example of theimage pickup device according to the fifth modification.

FIG. 23 is a view showing a cross-sectional configuration example of theimage pickup device according to the fifth modification.

FIG. 24 is a view showing a cross-sectional configuration example of animage pickup device according to a sixth modification.

FIG. 25 is a view showing a schematic configuration example of an imagepickup module according to a second embodiment of the presenttechnology.

FIG. 26 is a view showing a schematic configuration example of anelectronic apparatus according to a third embodiment of the presenttechnology.

DETAILED DESCRIPTION

Some embodiments and modifications of the present disclosure will bedescribed in detail below with reference to the accompanying drawings.Note that the description will be given in the following order.

1. First embodiment (image pickup device)

an example in which a metal wiring film is provided with a singleopening

2. Modifications (image pickup device)

First modification: an example in which a metal wiring layer is providedwith openings in respective pixels

Second modification: an example in which organic photoelectricconversion films in pixels are separated from one another

Third embodiment: an example in which a protective film is provided on atransparent electrode

Fourth modification: an example in which an optical black region isprovided

Fifth modification: an example in which an anti-flare film is provided

Sixth modification: an example in which a passivation film is provided

3. Second embodiment (image pickup module)

4. Third embodiment (electronic apparatus)

1. First Embodiment Configuration

FIG. 1 shows a upper-surface configuration example of an image pickupdevice 1 according to a first embodiment of the present technology; FIG.2 shows a cross-sectional configuration example as viewed from adirection of an A-A arrow in FIG. 1. The image pickup device 1 includes,for example, a pixel region 11 in which a plurality of pixels 12 arearranged in a matrix fashion. In addition, the image pickup device 1includes, for example, a drive circuit that drives the pixels 12, and atransfer circuit that transfers electrical charge generated in eachpixel 12 driven by the drive circuit. Furthermore, the image pickupdevice includes, for example, a read circuit that temporarily builds upthe electrical charge transferred by the transfer circuit, and thatoutputs a pixel signal having a voltage according to the level of thebuild-up charge.

The image pickup device 1 includes, for example, an insulating film 22,lower electrode films 23, an organic photoelectric conversion film 24,an upper electrode film 25, and a metal wiring film 26 on a substrate21. The lower electrode films 23, the organic photoelectric conversionfilm 24, and the upper electrode film 25 are disposed within the pixelregion 11 and stacked on the substrate 21 in this order. Each lowerelectrode film 23 and respective parts of the organic photoelectricconversion film 24 and the upper electrode film 25 which face each lowerelectrode film 23 configure the pixel 12. The organic photoelectricconversion film 24 is sandwiched between the lower electrode film 23 andthe upper electrode film 25 in each pixel 12.

The substrate 21 may be, for example, a semiconductor substrate or aninsulating substrate. Examples of the semiconductor substrate mayinclude a silicon substrate and a silicon-on-insulator (SOI) substrate.The silicon substrate or SOI substrate may be provided with a photodioderegion. The insulating film 22 electrically separates the lowerelectrode films 23 from one another. The insulating film 22 is made ofan insulating material that does not transmit moisture and gas easily.Examples of the insulating film 22 may include a silicon nitride film, asilicon nitrogen oxide film, an aluminum oxide film, and a stacked layercontaining two or more of these films.

The lower electrode films 23 are disposed on the substrate 21 with theinsulating film 22 therebetween. In addition, the lower electrode films23 are arranged away from one another, and electrically separated fromone another by the insulating film 22. Each lower electrode film 23 isan island-shaped film provided in the corresponding pixel 12, andfunctions as a pixel electrode. The lower electrode films 23 arearranged under the organic photoelectric conversion film 24, and are notdisposed outside a region facing the organic photoelectric conversionfilm 24. The organic photoelectric conversion film 24 converts lightwith a preset wavelength band into electricity, and contains an organicmaterial. The organic photoelectric conversion film 24 is a sheet-shapedfilm provided so as to be shared by all the pixels 12, and formed in thewhole of the pixel region 11.

The upper electrode film 25 is disposed at least an area directly abovethe organic photoelectric conversion film 24. The upper electrode film25 is a sheet-shaped film provided so as to be shared by all the pixels12, and formed in the whole of the pixel region 11. If the upperelectrode film 25 is formed only the area directly above the organicphotoelectric conversion film 24, the side of the upper electrode film25 is disposed on the organic photoelectric conversion film 24. If theupper electrode film 25 is formed so as to coat the organicphotoelectric conversion film 24, the side of the upper electrode film25 is disposed on the insulating film 22. The upper electrode film 25 isspatially isolated from the electrode films 23 by the insulating film22.

The upper electrode film 25 is made of an electrically conductive andoptically transmissive material. This conductive, transmissive materialmay be, for example, a metal containing one of Mg, Ag, Al, Cu, and Au oran alloy containing two or more thereof. In addition, one or both of Caand Li may be added to the above metal or alloy for the conductive,transmissive material. Alternatively, the conductive, transmissivematerial may be, for example, ITO or IZO. The above conductive,transmissive material may be any material that transmits light with thewavelength band which the organic photoelectric conversion film 24 isable to convert into electricity.

The metal wiring film 26 is in contact with the upper electrode film 25,and electrically connected to the upper electrode film 25. In addition,the metal wiring film 26 coats both the entire sides of the organicphotoelectric conversion film 24 and the upper electrode film 25. Here,the expression “coating both the entire sides of the organicphotoelectric conversion film 24 and the upper electrode film 25” refersto seamlessly covering both the outer sides of the organic photoelectricconversion film 24 and the upper electrode film 25 as viewed from adirection of a normal to the substrate 21. In the first embodiment, themetal wiring film 26 is positioned opposite both the sides of theorganic photoelectric conversion film 24 and the upper electrode film25, as well as the periphery of the upper surface of the upper electrodefilm 25. The periphery of the metal wiring film 26 is formed on theinsulating film 22. The metal wiring film 26 is spatially separated fromthe lower electrode films 23 by the insulating film 22.

The metal wiring film 26 is formed so as to avoid a region in the pixelregion 11 that faces the pixels 12 used to receive light. The metalwiring film 26 may be, for example, a circular film that has a singleopening 26A in a region that faces all the pixels 12 used to receivelight, as shown in FIGS. 1 and 2. All the pixels 12 used to receivelight may be, for example, accordingly exposed through the opening 26A.The metal wiring film 26 is made of a metal material that does nottransmit moisture and gas easily. The metal wiring film 26 may be madeof, for example, W, Al, Ti, Mo, Ta, Cu, an alloy containing one thereof,or a material containing one thereof and Si.

The image pickup device 1 may be provided with a passivation film on itsentire upper surface including the upper surface of the upper electrodefilm 25, as necessary. This passivation film protects the pixels 12, andmay be made of, for example, a silicon nitride film, a silicon nitrogenoxide film, an aluminum oxide film, or a stacked film containing two ormore thereof. The image pickup device 1 may be provided with a colorfilter instead of or together with the passivation film. The colorfilter is positioned opposite the pixels 12, and selectively transmitspart of externally incident light which lies within a desired wavelengthband. If the image pickup device 1 is provided with the protective film,such as the passivation film or color filter, on the upper surface ofthe upper electrode film 25, this protective film may have, for example,an opening through which the metal wiring film 26 is partially exposed.

Operation

Next, an operation example of the image pickup device 1 will bedescribed. In the image pickup device 1, a predetermined level ofvoltage is applied to each pixel 12, for example, through the metalwiring film 26. When external light enters the pixel region 11 throughan optical component such as a lens, part of the incident light isconverted into electricity by the organic photoelectric conversion film24, and electrical charge in the quantity according to the intensity ofthe incident light is built up in each pixel 12. This build-up charge iscollected in each lower electrode film 23 by virtue of an electric fieldgenerated from the voltage applied to each pixel 12. Then, a voltageaccording to the level of the electrical charge built up in each lowerelectrode film 23 is read at a preset timing, and output as a pixelsignal. Following this, the pixel signals are processed by the externalsignal processing circuit or any other processor, so that image data isgenerated.

Effect

Next, an effect of the image pickup device 1 will be described. In theimage pickup device 1, the metal wiring film 26 that is electricallyconnected to the upper electrode film 25 coats the entire side of theorganic photoelectric conversion film 24. The metal wiring film 26 usedto drive the image pickup device 1 thereby suppresses moisture and gasfrom entering the interior of the organic photoelectric conversion film24 through the side of the organic photoelectric conversion film 24. Theorganic photoelectric conversion film 24 could be distorted easily, inparticular, in the vicinity of its side. Therefore, if the passivationfilm is provided on the entire upper surface including the upper surfaceof the upper electrode film 25, a part of the passivation film which isin the vicinity of the side of the organic photoelectric conversion film24 may be cracked easily. In the first embodiment, however, even if thepart of the passivation film which is in the vicinity of the side of theorganic photoelectric conversion film 24 is cracked, it is possible toprevent an entry of moisture and gas through the crack. This is becausethe entire side of the organic photoelectric conversion film 24 iscoated by the metal wiring film 26. Consequently, it is possible toprevent deterioration of the organic photoelectric conversion film 24.

In the image pickup device 1, the metal wiring film 26 is used for notonly a voltage application path for the upper electrode film 25, butalso the protection of the organic photoelectric conversion film 24. Itis therefore possible to protect the organic photoelectric conversionfilm 24 without involving any additional process or member.

2. Modification

Next, modifications of the above image pickup device 1 in the firstembodiment will be described.

First Modification

FIG. 3 shows an upper-surface configuration example of the image pickupdevice 1 according to a first modification; FIG. 4 shows across-sectional configuration example as viewed from a direction of anA-A arrow in FIG. 3. The metal wiring film 26 in the first embodiment iscircular in shape with the single opening 26A, whereas the metal wiringfilm 26 in the first modification has, for example, openings 26B in therespective pixels 12 instead of the opening 26A, as shown in FIGS. 3 and4. The metal wiring film 26 is thereby present in a gap between eachadjacent pair of the pixels 12. As a result, it is possible to reservewindows for incident light, and to reduce an entry of moisture and gasto the interior of the organic photoelectric conversion film 24 throughthe upper surface of the organic photoelectric conversion film 24.Furthermore, it is possible to reduce a crosstalk between each adjacentpair of the pixels 12, due to a light shielding effect of the metalwiring film 26.

Second Modification

FIG. 5 shows a cross-sectional configuration example of the image pickupdevice 1 according to a second modification. More specifically, FIG. 5shows a cross-sectional configuration example of an area taken along aline A-A in FIG. 3. In the above first modification, each of the organicphotoelectric conversion film 24 and the upper electrode film 25 is asheet-shaped film provided so as to be shared by all the pixels 12. Inthe second modification, each of the organic photoelectric conversionfilm 24 and the upper electrode film 25 is disposed in the respectivepixels 12 while being separated from one another. Specifically, each ofthe organic photoelectric conversion film 24 and the upper electrodefilm 25 is formed of a plurality of island-shaped films provided in thecorresponding pixel 12. Each adjacent pair of the pixels 12 are therebyisolated from each other by the metal wiring film 26. It is thuspossible to reduce an entry of moisture and gas to the interior of theorganic photoelectric conversion film 24 through the side of the organicphotoelectric conversion film 24. Furthermore, it is possible to reducea crosstalk between each adjacent pair of the pixels 12 due to a lightshielding effect of the metal wiring film 26.

Third Modification

FIGS. 6 to 8 show cross-sectional configuration examples of the imagepickup devices 1 according to a third modification. FIG. 6 shows amodification of the image pickup device 1 in the first embodiment. FIG.7 shows a modification of the image pickup device 1 in the firstmodification. FIG. 8 shows a modification of the image pickup device 1in the second modification.

Each of the image pickup devices 1 in the third modification is providedwith a protective film 27 that coats both the organic photoelectricconversion film 24 and the upper electrode film 25. The protective film27 is formed between the organic photoelectric conversion film 24 andthe metal wiring film 26 and between the upper electrode film 25 and themetal wiring film 26. Each protective film 27 may be, for example,formed along the upper surface of the upper electrode film 25 and boththe sides of the organic photoelectric conversion film 24 and the upperelectrode film 25, as shown in FIGS. 6 to 8. In FIGS. 6 and 7, eachprotective film 27 is a sheet-shaped film provided so as to be shared byall the pixels 12, and formed in the whole of the pixel region 11. InFIG. 8, the protective film 27 is configured with a plurality ofisland-shaped films provided in the respective pixels 12 and a circularfilm on the periphery of the pixel region 11.

The protective film 27 reduces an entry of moisture and gas to theinterior of the organic photoelectric conversion film 24 through theupper surface of the organic photoelectric conversion film 24. Theprotective film 27 may be, for example, a silicon nitride film, asilicon nitrogen oxide film, an aluminum oxide film, or a stacked filmcontaining two or more of these films.

In each of FIGS. 6 to 8, the protective film 27 has one or more openings27H positioned opposite the upper electrode film 25. Each opening 27Hserves as a passage which the upper electrode film 25 makes contact withthe metal wiring film 26. A part of the upper electrode film 25 isfilled in each opening 27H, and the metal wiring film 26 makes contactwith the upper electrode film 25 via the one or more openings 27H.

Manufacturing Method

Each of the image pickup devices 1 in the third modification may bemanufactured by the following method. Thereinafter, a method ofmanufacturing the image pickup device 1 shown in FIG. 6 will bedescribed; however the image pickup devices 1 shown in FIGS. 7 and 8 mayalso be manufactured by substantially the same method.

FIGS. 9A, 9B, 10A, and 10B show an example of method of manufacturingthe image pickup device 1 shown in FIG. 6, in accordance with a processsequence. First, the insulating film 22, the lower electrode film 23,the organic photoelectric conversion film 24, and the upper electrodefilm 25 are formed on the substrate 21. Then, a protective film 27A isformed on the upper electrode film 25 at a preset location (FIG. 9A).The protective film 27A functions as a mask at the subsequent etchingstep. The protective film 27A may be formed, for example, only in aregion that will become the pixel region 11 at a following step. Theprotective film 27A may be, for example, a silicon nitride film, asilicon nitrogen oxide film, an aluminum oxide film, or two or more ofthese films. Then, the organic photoelectric conversion film 24 and theupper electrode film 25 are selectively etched by using the protectivefilm 27A as a mask (FIG. 9B). As a result, both the organicphotoelectric conversion film 24 and the upper electrode film 25 areformed, for example, only in a region that will become the pixel region11 at a following step.

Next, a protective film 27B is formed on the whole of the upper surfaceincluding the protective film 27A while the protective film 27A is left(FIG. 10A). The protective film 27B may be, for example, a siliconnitride film, a silicon nitrogen oxide film, an aluminum oxide film, ora stacked film containing two or more of these films. A protective filmformed of the protective films 27A and 27B corresponds to a specificexample of the protective film 27. More specifically, the protectivefilm 27 is formed of the protective film 27A that coats the uppersurface of the upper electrode film 25, and the protective film 27B thatcoats both the organic photoelectric conversion film 24 and theprotective film 27A.

Subsequently, the one or more openings 27H are formed in the protectivefilm 27 at preset locations, and then the metal wiring film 26 is formedso as to be embedded in the openings 27H and to coat both the entiresides of the organic photoelectric conversion film 24 and the upperelectrode film 25 (FIG. 10B). After that, a passivation film may beformed on the whole of the upper surface including the upper surface ofthe upper electrode film 25 as necessary. Through the above steps, theimage pickup device 1 shown in FIG. 6 is manufactured.

In a process for manufacturing the image pickup device 1 shown in FIG.8, in order to form the one or more openings 27H in the protective film27, a groove 27G is formed in a region that faces the gap between eachadjacent pair of the lower electrode films 23 so as to pass through theprotective film 27, the upper electrode film 25, and the organicphotoelectric conversion film 24. Then, the metal wiring film 26 isformed so as to be embedded in the openings 27H and the grooves 27G andto coat both the entire sides of the organic photoelectric conversionfilm 24 and the upper electrode film 25. After that, a passivation filmmay be formed on the whole of the upper surface including the uppersurface of the upper electrode film 25 as necessary. Through the abovesteps, the image pickup device 1 shown in FIG. 8 is manufactured.

Note that in each of the methods of manufacturing the image pickupdevices 1 in FIGS. 6, 7, and 8, the forming of the protective film 27Bmay be skipped. In this case, the image pickup devices 1 are obtained,in which the protective film 27A is provided only on the upper surfaceof the upper electrode film 25, and in which both the sides of theorganic photoelectric conversion film 24 and the upper electrode film 25are in contact with the metal wiring film 26, for example, as shown inFIG. 12.

In the third modification, the protective film 27 or 27A protects theorganic photoelectric conversion film 24. This makes it possible toreduce an entry of moisture and gas to the interior of the organicphotoelectric conversion film 24 through the upper surface of theorganic photoelectric conversion film 24. The protective film 27A isalso used as a mask when both the organic photoelectric conversion film24 and the upper electrode film 25 are selectively etched. In otherwords, the protective film 27A also serves the purpose of mitigating anetching damage to the organic photoelectric conversion film 24. It isthus possible to use the protective film 27A to suppress deteriorationof the organic photoelectric conversion film 24 which would be caused byetching damage.

In the third modification, the protective film 27A that has been used asan etching mask is left deliberately, and is reused as a protective filmfor the organic photoelectric conversion film 24. This makes it possibleto provide a protective film (protective film 27A) for the organicphotoelectric conversion film 24 without involving any additionalprocess.

Fourth Modification

FIGS. 13 to 20 show examples of image pickup device 1 in a fourthmodification. FIGS. 13 and 15 show upper-surface configuration examplesof the image pickup devices 1 in the fourth modification. FIG. 14 showsa cross-sectional configuration example as viewed from a direction of anA-A arrow in FIG. 13. FIGS. 16 and 17 show cross-sectional configurationexamples from a direction of an A-A arrow in FIG. 15. FIG. 18 shows across-sectional configuration example as viewed from a direction of theA-A arrow in FIG. 13. FIGS. 19 and 20 show cross-sectional configurationexamples as viewed from a direction of an A-A arrow in FIG. 15.

The metal wiring films 26 in the first embodiment and first, second, andthird embodiments are formed so as to avoid the pixels 12, whereas eachof metal wiring films 26 in the fourth modification covers one or moreof the pixels 12. The one or more pixels covered by each metal wiringfilm 26 are used to acquire a black-level pixel signal. Each metalwiring film 26 accordingly has the single opening 26A or the pluralityof openings 26B in a region (image region 11A) facing all the pixels outof the plurality of pixels 12 which are used to receive light. Inaddition, each metal wiring film 26 covers a region (optical blackregion 11B) facing all the pixels 12 out of the plurality of pixels 12which are used to acquire the black-level pixel signal.

Each metal wiring film 26 in the fourth embodiment is utilized as both avoltage application path for the upper electrode film 25 and aprotective film for the organic photoelectric conversion film 24, aswell as a light-shielding film used to acquire the black-level pixelsignal. In this way, the metal wiring film 26 plays the three rolessimultaneously. This enables enhancement of a performance and functionof each image pickup device 1 without complicating its internalconfiguration.

Fifth Modification

FIGS. 21 to 23 show examples of the image pickup device 1 in a fifthmodification. FIGS. 21 to 23 show cross-sectional configuration examplesof the image pickup devices 1 in the fifth modification.

The image pickup devices 1 in the fifth modification are configured byproviding anti-flare films 28 on the upper surfaces of the metal wiringfilms 26 in the first embodiment, and first, second, third, and fourthmodifications, respectively. Each anti-flare film 28 prevents incidentlight from being reflected on the upper surface of the metal wiring film26. Each anti-flare film 28 may be made of, for example, a color filterfilm or a stacked film utilizing a multiple interference effect. In thefifth modification, providing the anti-flare film 28 on the uppersurface of the metal wiring film 26 makes it possible to prevent thegeneration of a flare which would be caused by the reflection ofincident light on the upper surface of the metal wiring film 26.

Sixth Modification

The image pickup device 1 in each of the first embodiment and first tofifth modifications may be provided with a passivation film on itsentire upper surface including the upper surface of the upper electrodefilm 25 or the protective film 27. This passivation film protects thepixels 12, and may be made of, for example, a silicon nitride film, asilicon nitrogen oxide film, an aluminum oxide film, or a stacked filmcontaining two or more of these films. The image pickup device 1 may be,for example, provided with a passivation film 29 on its entire uppersurface including the upper surfaces of the upper electrode film 25 andthe metal wiring film 26, as shown in FIG. 24. A material of thepassivation film 29 may be substantially the same as that of thepassivation film above.

Each image pickup device 1 may be provided with a color filter insteadof or together with the passivation film. This color filter ispositioned opposite the pixels 12, and selectively transmits externallyincident light with a desired wavelength band. If the image pickupdevice 1 is provided with a protective film, such as a passivation filmor a color filter, on the upper surface of the upper electrode film 25or the protective film 27, this protective film may have an openingthrough which the metal wiring film 26 is partially exposed. The part ofthe metal wiring film 26 which is exposed through the opening serves asa pad electrode that electrically connects the metal wiring film 26 toan external circuit.

In the sixth modification, the passivation film is provided on the wholeof the upper surface including the upper surface of the upper electrodefilm 25. This suppresses moisture and gas from entering the interior ofthe organic photoelectric conversion film 24 through the upper surfaceof the organic photoelectric conversion film 24. Consequently, it ispossible to suppress deterioration of the organic photoelectricconversion film 24.

2. Second Embodiment

FIG. 25 shows a schematic configuration example of an image pickupmodule 2 according to a second embodiment of the present technology.Components of the image pickup module 2 may be the image pickup device 1in one of the first embodiment and its modifications, and a signalprocessing circuit 30 that subjects the pixel signal output from theimage pickup device 1 to a predetermined process. The image pickupdevice 1 and the signal processing circuit 30 are mounted, for example,on a single wiring substrate. The signal processing circuit 30 mayinclude, for example, a digital signal processor (DSP).

The image pickup module 2 in the second embodiment is equipped with theimage pickup device 1 in one of the first embodiment and itsmodifications. It is therefore possible to provide the image pickupmodule 2 with decreased aged deterioration of an image quality.

3. Third Embodiment

FIG. 26 shows a schematic configuration example of an electronicapparatus 3 according to a third embodiment of the present technology.Components of the electronic apparatus 3 may be the above image pickupmodule 2 in the second embodiment, a lens 31, a display unit 32, and astorage unit 33. The lens 31 causes external light to enter the imagepickup device 1 in the image pickup module 2. The display unit 32displays an output from the image pickup module 2 as an image. Thestorage unit 33 stores the output from the image pickup module 2.However, the electronic apparatus 3 does not necessarily have to beprovided with the storage unit 33. In this case, the electronicapparatus 3 may be provided with a write unit that writes informationonto an external storage unit.

The electronic apparatus 3 in the third embodiment is equipped with theabove image pickup module 2 in the second embodiment. This makes itpossible to provide an image pickup module 2 with decreased ageddeterioration of an image quality.

Up to this point, the embodiments and their modifications of the presenttechnology have been described; however there is no limitation on theembodiments and the like of the present technology, and variousmodifications and variations are possible.

Note that an embodiment of the present technology may also include thefollowing configuration.

It is possible to achieve at least the following configurations from theabove-described example embodiments of the disclosure.

(1) An image pickup device including:

a first electrode film;

an organic photoelectric conversion film;

a second electrode film; and

a metal wiring film electrically connected to the second electrode film,

the first electrode film, the organic photoelectric conversion film, andthe second electrode film all provided on a substrate in this order, and

the metal wiring film coating an entire side of the organicphotoelectric conversion film.

(2) The image pickup device according to (1), wherein

the metal wiring film is made of W, Al, Ti, Mo, Ta, Cu, an alloycontaining one or more thereof, or a material containing one or morethereof and Si.

(3) The image pickup device according to (1) or (2), further including aprotective film coating the organic photoelectric conversion film andthe second electrode film, the protective film formed between theorganic photoelectric conversion film and the metal wiring film.(4) The image pickup device according to (3), wherein

the protective film is a silicon nitride film, a silicon nitrogen oxidefilm, an aluminum oxide film, or a stacked film containing two or morethereof.

(5) The image pickup device according to (3) or (4), wherein

the protective film includes a first protective film and secondprotective film, the first protective film coating an upper surface ofthe second electrode film, the second protective film coating theorganic photoelectric conversion film and the first protective film.

(6) The image pickup device according to any one of (3) to (5), wherein

the protective film has one or more openings positioned opposite thesecond electrode film, and

the metal wiring film makes contact with the second electrode film viathe one or more openings.

(7) The image pickup device according to any one of (1) to (6), wherein

the first electrode film includes a plurality of pixel electrodesprovided in respective pixels,

the organic photoelectric conversion film is a sheet-shaped filmprovided to be shared by all the pixels, and

the metal wiring film coats an entire side of the sheet-shaped film.

(8) The image pickup device according to any one of (1) to (6), wherein

the first electrode film includes a plurality of pixel electrodesprovided in respective pixels,

the organic photoelectric conversion film includes a plurality ofisland-shaped films provided in the respective pixels, and

the metal wiring film coats an entire side of each of the island-shapedfilms.

(9) An electronic apparatus including:

an image pickup device; and

a signal processing circuit subjecting a pixel signal output from theimage pickup device to a predetermined process,

the image pickup device including a first electrode film, an organicphotoelectric conversion film, and a second electrode film which are allprovided on a substrate in this order, and a metal wiring filmelectrically connected to the second electrode film, the metal wiringfilm coating an entire side of the organic photoelectric conversionfilm.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

The invention claimed is:
 1. An image pickup device comprising: aplurality of first electrode films formed on a substrate; a continuousorganic photoelectric conversion film configured to convert light intoelectrical charge, wherein the organic photoelectric conversion film issubstantially parallel to the substrate and is formed above theplurality of first electrode films; a continuous second electrode filmsubstantially parallel to the substrate; a photodiode disposed in thesubstrate; a metal wiring film electrically connected to the secondelectrode film; and a film coating at least one of a side surface of theorganic photoelectric conversion film and a side surface of the secondelectrode film, wherein the plurality of first electrode films, theorganic photoelectric conversion film, and the second electrode film areprovided above the substrate in this order, and wherein a portion of thefilm is between a portion of the metal wiring film and a portion of theorganic photoelectric conversion film.
 2. The image pickup deviceaccording to claim 1, wherein the metal wiring film is made of W, Al,Ti, Mo, Ta, Cu, an alloy containing one or more thereof, or a materialcontaining one or more thereof and Si.
 3. The image pickup deviceaccording to claim 1, wherein the film is a silicon nitride film, asilicon nitrogen oxide film, an aluminum oxide film, or a stacked filmcontaining two or more thereof.
 4. The image pickup device according toclaim 1, wherein the film includes a first film and a second film, thefirst film coating an upper surface of the second electrode film, andthe second film coating the organic photoelectric conversion film andthe first film.
 5. The image pickup device according to claim 1, whereinthe film has one or more openings positioned opposite the secondelectrode film, and the metal wiring film makes contact with the secondelectrode film via the one or more openings.
 6. The image pickup deviceaccording to claim 1, wherein the plurality of first electrode filmscorrespond to a plurality of pixel electrodes provided in respectivepixels, and the metal wiring film coats an entire side of the film. 7.An electronic apparatus comprising: an image pickup device including: aplurality of first electrode films formed on a substrate, a continuousorganic photoelectric conversion film configured to convert light intoelectrical charge, wherein the organic photoelectric conversion film issubstantially parallel to the substrate and is formed above theplurality of first electrode films, a continuous second electrode filmsubstantially parallel to the substrate, a photodiode disposed in thesubstrate, a metal wiring film electrically connected to the secondelectrode film, and a film coating at least one of a side surface of theorganic photoelectric conversion film and a side surface of the secondelectrode film, wherein the plurality of first electrode films, theorganic photoelectric conversion film, and the second electrode film areprovided above the substrate in this order, and wherein a portion of thefilm is between a portion of the metal wiring film and a portion of theorganic photoelectric conversion film; and a lens configured to causeexternal light to enter the image pickup device.
 8. The electronicapparatus according to claim 7, wherein the metal wiring film is made ofW, Al, Ti, Mo, Ta, Cu, an alloy containing one or more thereof, or amaterial containing one or more thereof and Si.
 9. The electronicapparatus according to claim 7, wherein the film is a silicon nitridefilm, a silicon nitrogen oxide film, an aluminum oxide film, or astacked film containing two or more thereof.
 10. The electronicapparatus according to claim 7, wherein the film includes a first filmand a second film, the first film coating an upper surface of the secondelectrode film, and the second film coating the organic photoelectricconversion film and the first film.
 11. The electronic apparatusaccording to claim 7, wherein the film has one or more openingspositioned opposite the second electrode film, and the metal wiring filmmakes contact with the second electrode film via the one or moreopenings.
 12. The image pickup device according to claim 7, wherein theplurality of first electrode films correspond to a plurality of pixelelectrodes provided in respective pixels, and the metal wiring filmcoats an entire side of the film.